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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.841 - 845, 2021-02 | |
| The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02 | |
| Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03 | |
| Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04 | |
| Effect of Ga composition on mobility in a-InGaZnO thin-film transistors Ahn, Minho; Gaddam, Venkateswarlu; Park, Sungho; Jeon, Sanghun, NANOTECHNOLOGY, v.32, no.9, 2021-02 | |
| Stress Engineering as a Strategy to Achieve High Ferroelectricity in Thick Hafnia Using Interlayer Joh, Hongrae; Jung, Taeseung; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2538 - 2542, 2021-05 | |
| Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 degrees C) Annealing Process Gaddam, Venkateswarlu; Das, Dipjyoti; Jung, Taeseung; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.6, pp.812 - 815, 2021-06 | |
| Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF APPLIED PHYSICS, v.129, no.24, 2021-06 | |
| Oxide electronics: Translating materials science from lab-to-fab Nathan, Arokia; Jeon, Sanghun, MRS BULLETIN, v.46, no.11, pp.1028 - 1036, 2021-11 | |
| Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier Kim, Minki; Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.119, no.26, 2021-12 |
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