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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.841 - 845, 2021-02 | |
| The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02 | |
| Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196, 2020-08 | |
| Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier Kim, Minki; Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.119, no.26, 2021-12 | |
| Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays Goh, Youngin; Hwang, Junghyeon; Kim, Minki; Lee, Yongsun; Jung, Minhyun; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12 | |
| Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.12, no.51, pp.57539 - 57546, 2020-12 | |
| High-Performance and High-Endurance HfO2-Based Ferroelectric Field-Effect Transistor Memory with a Spherical Recess Channel Kim, Taeho; Hwang, Junghyeon; Kim, Giuk; Jung, Minhyun; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.15, no.5, 2021-05 |
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