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Results 1-9 of 9 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices

Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.841 - 845, 2021-02

2
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

Lee, Yongsun; Goh, Youngin; Hwang, Junghyeon; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.2, pp.523 - 528, 2021-02

3
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOSCALE, v.12, no.16, pp.9024 - 9031, 2020-04

4
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

Hwang, Junghyeon; Goh, Youngin; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196, 2020-08

5
Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode

Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08

6
Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing

Woo, Jiyong; Goh, Youngin; Im, Solyee; Hwang, Jeong Hyeon; Kim, Yeriaron; Kim, Jeong Hun; Im, Jong-Pil; Yoon, Sung-Min; Moon, Seung Eon; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02

7
Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier

Kim, Minki; Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.119, no.26, 2021-12

8
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays

Goh, Youngin; Hwang, Junghyeon; Kim, Minki; Lee, Yongsun; Jung, Minhyun; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.13, no.49, pp.59422 - 59430, 2021-12

9
Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering

Goh, Youngin; Hwang, Junghyeon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.12, no.51, pp.57539 - 57546, 2020-12

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