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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors Lee, Sung Won; Shin, Minkwan; Park, Jae Yoon; Kim, Bong Soo; Tu, Deyu; Jeon, Sanghun; Jeong, Unyong, SCIENCE OF ADVANCED MATERIALS, v.7, no.5, pp.874 - 880, 2015-05 | |
| Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 | |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 | |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 | |
| Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 | |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 | |
| Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02 | |
| Fast and slow transient charging of Oxide Semiconductor Transistors Kim, Taeho; Park, Sungho; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-09 | |
| Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor Park, Junghak; Woo, Hyunsuk; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.35, no.5, 2017-09 | |
| Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.29, no.17, 2018-04 |
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