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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; Song, Jindong; Doh, Yong-Joo; Yu, Dong, NANO LETTERS, v.15, no.9, pp.5875 - 5882, 2015-09 | |
| Fast transient charging behavior of HfInZnO thin-film transistor Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, APPLIED PHYSICS LETTERS, v.107, no.9, 2015-08 | |
| Ar plasma treated ZnON transistor for future thin film electronics Lee, Eunha; Kim, Taeho; Benayad, Anass; Kim, HeeGoo; Jeon, Sanghun; Park, Gyeong-Su, APPLIED PHYSICS LETTERS, v.107, no.12, 2015-09 | |
| Photoresponse of an oxide semiconductor photosensor Ahn, Seung-Eon; Park, Sungho; Kim, Taeho; Park, Junghak; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.3, 2015-05 | |
| High mobility and high stability glassy metal-oxynitride materials and devices Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun, SCIENTIFIC REPORTS, v.6, 2016-04 | |
| Pulse I-V characterization of a nanocrystalline oxide device with sub-gap density of states Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.21, 2016-05 | |
| The influence of interfacial defects on fast charge trapping in nanocrystalline oxide-semiconductor thin film transistors Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.31, no.5, 2016-05 | |
| Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279, 2017-03 | |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 | |
| Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02 |
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