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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized G(max)-Core and Transmission Line-Based Zero-Degree Power Networks Yun, Byeonghun; Park, Dae-Woong; Lee, Sang-Gug, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.11, pp.3089 - 3102, 2023-11 | |
| A 250-GHz Wideband Direct-Conversion CMOS Receiver Adopting Baseband Equalized Low-Loss Resistive Passive Mixer Jeon, Hyo-Ryeong; Yun, ByeongHun; Lee, Ho-Keun; Lee, Sang-Gug; Choi, Kyungsik, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.70, no.10, pp.3852 - 3856, 2023-10 | |
| A 10 Gbps Optical Receiver Analog Front-End and MZM Driver in 65nm CMOS Qahir, Abdul; Lee, Sang-Gug, IDEC Journal of Integrated Circuits and Systems, v.9, no.2, pp.14 - 19, 2023-04 | |
| A 250-GHz 12.6-dB Gain and 3.8-dBm P-sat Power Amplifier in 65-nm CMOS Adopting Dual-Shunt Elements Based G(max)-Core Yun, Byeonghun; Park, Dae-Woong; Choi, Won-Jong; Mahmood, Hafiz Usman; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.3, pp.292 - 295, 2021-03 |
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