Search
Results 11-20 of 503 (Search time: 0.004 seconds).
| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Polymer-Assisted Solution Processing of TiO2 Thin Films for Resistive-Switching Random Access Memory Vishwanath, Sujaya Kumar; Jeon, Sanghun; Kim, Jihoon, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.164, no.2, pp.H21 - H24, 2017 | |
| Geometric Calibration of Micro-Lens-Based Light Field Cameras Using Line Features Bok, Yunsu; Jeon, Hae-Gon; Kweon, In-So, IEEE TRANSACTIONS ON PATTERN ANALYSIS AND MACHINE INTELLIGENCE, v.39, no.2, pp.287 - 300, 2017-02 | |
| Defects and Charge-Trapping Mechanisms of Double-Active-Layer In-Zn-O and Al-Sn-Zn In-O Thin-Film Transistors Goh, Youngin; Kim, Taeho; Yang, Jong-Heon; Choi, Ji Hun; Hwang, Chi-Sun; Cho, Sung Haeng; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.11, pp.9271 - 9279, 2017-03 | |
| Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong, ACS APPLIED MATERIALS & INTERFACES, v.9, no.32, pp.27073 - 27082, 2017-08 | |
| Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor Woo, Hyunsuk; Jeon, Sanghun, SCIENTIFIC REPORTS, v.7, 2017-08 | |
| Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V method Woo, Hyunsuk; Kim, Taeho; Hur, Jihyun; Jeon, Sanghun, NANOTECHNOLOGY, v.28, no.17, 2017-04 | |
| A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors Hur, Ji-Hyun; Park, Junghak; Jeon, Sanghun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.50, no.6, 2017-02 | |
| Influence of Fast Charging on Accuracy of Mobility in a-InHfZnO Thin-Film Transistor Kim, Taeho; Choi, Rino; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.38, no.2, pp.203 - 206, 2017-02 | |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications Oh, Seungyeol; Kim, Taeho; Kwak, Myunghoon; Song, Jeonghwan; Woo, Jiyong; Jeon, Sanghun; Yoo, In Kyeong; Hwang, Hyunsang, IEEE ELECTRON DEVICE LETTERS, v.38, no.6, pp.732 - 735, 2017-06 | |
| Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun, PHYSICAL REVIEW APPLIED, v.7, no.4, 2017-04 |
Discover
Type
- 503 Article
Open Access
- 36 OA Article