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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09
2	Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11
3	Fin Width (W-fin) Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.71 - 73, 2010-01
4	P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Kim, Sung-Ho; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742, 2010-08
5	Double-Gate Nanowire Field Effect Transistor for a Biosensor Ahn, Jae-Hyuk; Choi, Sung-Jin; Han, Jin-Woo; Park, Tae-Jung; Lee, Sang-Yup; Choi, Yang-Kyu, NANO LETTERS, v.10, no.8, pp.2934 - 2938, 2010-08

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