P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain

Abstract

A p-channel dopant-segregated-Schottky-barrier (DSSB) device based on a SOI FinFET structure is proposed for silicon-oxide-nitride-oxide-silicon type Flash memory, providing the feasibility of bit-by-bit operation through the aid of a symmetric program/erase operation. This concept is based on utilizing injected holes due to enhanced Fowler-Nordheim tunneling probability triggered by the sharpened energy band bending at the DSSB source/drain junctions as a programming method and the tunneled electrons from a silicon channel as an erasing method. As a result, a threshold voltage window of nearly 4 V and good data retention are achieved within a P/E time of 3.2 mu s.