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Results 1-6 of 6 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Fin-Width Dependence of BJT-Based 1T-DRAM Implemented on FinFET

Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.909 - 911, 2010-09

2
Dopant-Segregated Schottky Source/Drain FinFET With a NiSi FUSI Gate and Reduced Leakage Current

Choi, Sung-Jin; Han, Jin-Woo; Kim, Sung-Ho; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.11, pp.2902 - 2906, 2010-11

3
Fin Width (W-fin) Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.71 - 73, 2010-01

4
P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain

Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Kim, Sung-Ho; Jang, Moon-Gyu; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742, 2010-08

5
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.840 - 847, 2013-02

6
A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current Model

Duarte, Juan Pablo; Choi, Sung-Jin; Moon, Dong-Il; Ahn, Jae-Hyuk; Kim, Jee-Yeon; Kim, Sung-Ho; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.2, pp.848 - 855, 2013-02

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