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Showing results 1 to 7 of 7

1
0.15 mu m T-shaped gate pseudomorphic HEMT fabricated using a new optical lithographic technique

Park, BS; Lee, JH; Yoon, HS; Yang, JW; Park, Chul Soon; Pyun, KE, ELECTRONICS LETTERS, v.32, no.24, pp.2270 - 2271, 1996-11

2
A new optical lithographic technique using phase shifting mask with concurrent development and planarization for the formation of 0.15 mu m T shaped gate

Park, BS; Lee, JH; Yoon, HS; Yang, JW; Park, Chul Soon; Pyun, KE; Kim, IK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.S217 - S220, 1997-06

3
Fabrication and Characteristics of Extremely Low-Noise AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs

Yoon, HS; Lee, JH; Park, BS; Yun, CE; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, no.6, pp.741 - 744, 1998-12

4
High breakdown voltage P-HEMT using single gate lithography and two-step gate recess process

Yoon, HS; Lee, JH; Park, BS; Lee, CW; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, pp.478 - 481, 1999-06

5
KrF excimer laser lithography with a dummy diffraction mask

Kim, DH; Park, BS; Chung, HB; Lee, JH; Yoo, Hyung Joun; Oh, YH, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.29, no.3, pp.317 - 320, 1996-06

6
Low-noise AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor recessed by electron cyclotron resonance plasma etching

Lee, JH; Choi, HT; Lee, CW; Yoon, HS; Park, BS; Park, Chul Soon, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.34, no.2, pp.150 - 153, 1999-02

7
Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

Lee, JH; Yoon, HS; Park, BS; Park, Chul Soon; Choi, SS; Pyun, KE, ETRI JOURNAL, v.18, no.3, pp.171 - 179, 1996-10

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