0.15 mu m T-shaped gate pseudomorphic HEMT fabricated using a new optical lithographic technique

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The authors propose a new optical lithographic technique to form a 0.15 mu m length T-shaped gate. The lithographic technique is composed of PSM, low temperature PECVD of SiN, concurrent development and planarisation of the photoresist. By using this technique, a 0.15 mu m AlGaAs/InGaAs/GaAs PHEMT was successfully fabricated, and with a transconductance of 498mS/mm and cutoff frequency of 62.4GHz.
Publisher
IEE-INST ELEC ENG
Issue Date
1996-11
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.32, no.24, pp.2270 - 2271

ISSN
0013-5194
DOI
10.1049/el:19961492
URI
http://hdl.handle.net/10203/271003
Appears in Collection
EE-Journal Papers(저널논문)
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