Browse "EE-Conference Papers(학술회의논문)" by Author Ang, CH
Showing results 1 to 6 of 6
| A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide Cho, Byung Jin; Ang, CH; Ling, CH; Cheng, ZY, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.254 - 254, 2000-08-28 |
| Characterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18µm Technology and Beyond Cho, Byung Jin; Tan, SS; Ang, CH; Lek, CM; Chen, T; See, A; Chan, L, 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.254 - 254, 2002-07-08 |
| Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide Cho, Byung Jin; Lek, CM; Loh, WY; Ang, CH; Lin, W; Tan, YL; Zhen, JZ; et al, 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.0 - 0, 2002-07-08 |
| Energy gap and band alignment of (HfO2)x(Al2O3)1-x on (100) Si by XPS Cho, Byung Jin; Yu, HY; Li, MF; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ, 2002 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2002-12-17 |
| Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
| Progressive breakdown statistics in ultra-thin silicon dioxides Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08 |
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Type
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- 8 Book
- 22,783 Conference
Date issued
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- 7,999 2000 - 2009
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