Showing results 1 to 3 of 3
A Novel Procedure for Circuit Modeling of Dielectric Relaxation of (Ba,Sr)TiO3 Thin Film Capacitor and Its Effect on DRAM Operation 이희철; 장병탁; 차선용, 제6회 한국반도체 학술대회, pp.239 - 240, 1999 |
Calulation of Trap Densities between BST/Pt Interface from Capacitance-Voltage Characteristics and Rapid Thermal Annealing Fttect for DRAM Application 이희철; 곽동화; 장병탁; 차선용, 제 4회 한국반도체 학술대회, pp.0 - 0, 1997-02-01 |
Ir Thin Film as a Bottom Electrode for High Dielectic (Ba,Sr)TiO3 Capacitor 이희철; 차선용; 장병탁; 곽동화, 제 4회 한국반도체 학술대회, pp.0 - 0, 1997-02-01 |
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