Calulation of Trap Densities between BST/Pt Interface from Capacitance-Voltage Characteristics and Rapid Thermal Annealing Fttect for DRAM Application

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Issue Date
1997-02-01
Language
KOR
Citation

제 4회 한국반도체 학술대회, pp.0 - 0

URI
http://hdl.handle.net/10203/123573
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EE-Conference Papers(학술회의논문)
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