Fabrication of hydrogenated amorphous silicon thin-film transistors for flat panel display평판 표시기를 위한 수소화 비정질 실리콘 박막 트랜지스터의 제작

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In this thesis, amorphous silicon Thin-Film Transistors(TFT``s) have been designed and fabricated on a glass plate. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane ($SiH_4$) in hydrogen ambient by rf glow discharge method. Amorphous silicon nitride (a-SiN) has been chosen as the dielectric material. It has been prepared by decomposing the mixed gas of silane ($SiH_4$) and ammonia ($NH_3$). The electrical properties and performance characteristics of TFT have been measured and compared with the requirements for the switching elements in $100 \times 100$ liquid crystal flat panel display. The results show that LC (liquid crystal) display can be fabricated using the TFT``s presented in this thesis.
Advisors
Kyung, Chong-MinresearcherKim, Choong-Kiresearcher경종민researcher김충기researcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
1986
Identifier
65190/325007 / 000841030
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기 및 전자공학과, 1986.2, [ [iv], 47 p. ]

URI
http://hdl.handle.net/10203/39772
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=65190&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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