Fabrication of hydrogenated amorphous silicon thin-film transistors for flat panel display

Abstract

In this thesis, amorphous silicon Thin-Film Transistors(TFT``s) have been designed and fabricated on a glass plate. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane ($SiH_4$) in hydrogen ambient by rf glow discharge method. Amorphous silicon nitride (a-SiN) has been chosen as the dielectric material. It has been prepared by decomposing the mixed gas of silane ($SiH_4$) and ammonia ($NH_3$). The electrical properties and performance characteristics of TFT have been measured and compared with the requirements for the switching elements in $100 \times 100$ liquid crystal flat panel display. The results show that LC (liquid crystal) display can be fabricated using the TFT``s presented in this thesis.