Channel illumination effect of MOSFET and biosensor application

Abstract

As information technology has been developed rapidly over the last decade, electronic communication devices are required to be tiny, mobile and low-powered. Recently, it was demonstrated that the optical interconnects could increase the IC performances and solve many of challenges imposed by electrical interconnects. The FETs are, as its name tells us, conventionally operated by the field effect. On the other hand, transistors exhibit the photosensitive effects when they are exposed to light. Phototransistors takes advantage of photosensitive effect and are used as optoelectronic switches in a form of the bipolar junction transistor. Thus, the phototransistor is a kind of a junction transistor operated by light effect. The junction transistors have been replaced with field effect transistors in the digital era. A light effect transistor could satisfy demand for low-power and be suitable for the optical interconnects. A study of light effect in the field effect transistor is of importance. We introduce a covered structure field effect transistor with a transparent gate whose source/drain depletion region and field area are covered to block light. We investigated light effect in the field effect transistors and combination characteristics of light effect and field effect in the field effect transistors. In addition, we demonstrated functional performance of the fabricated device as a biosensor application.