Passivation과 field plate 구조를 이용한 고전력 AlGaN/GaN HEMT 제작Fabrication of high power AlGaN/GaN HEMTs using passivation and field plate structure
- Advisors
- 양경훈researcher; Yang, Kyoung-Hoonresearcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2005
- Identifier
- 243680/325007 / 020033110
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2005.2, [ iii, 62 p. ]
- Keywords
SiN; 평판; Passivation; AlGaN/GaN HEMT; BCB; Benzocyclobutene(BCB); Silicon Nitride(SiN); Field-plate; Passivation; AlGaN/GaN HEMT
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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