DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 양경훈 | - |
dc.contributor.advisor | Yang, Kyoung-Hoon | - |
dc.contributor.author | 김승훈 | - |
dc.contributor.author | Kim, Seung-Hun | - |
dc.date.accessioned | 2011-12-14T01:54:42Z | - |
dc.date.available | 2011-12-14T01:54:42Z | - |
dc.date.issued | 2005 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=243680&flag=dissertation | - |
dc.identifier.uri | http://hdl.handle.net/10203/37854 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2005.2, [ iii, 62 p. ] | - |
dc.language | kor | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | SiN | - |
dc.subject | 평판 | - |
dc.subject | Passivation | - |
dc.subject | AlGaN/GaN HEMT | - |
dc.subject | BCB | - |
dc.subject | Benzocyclobutene(BCB) | - |
dc.subject | Silicon Nitride(SiN) | - |
dc.subject | Field-plate | - |
dc.subject | Passivation | - |
dc.subject | AlGaN/GaN HEMT | - |
dc.title | Passivation과 field plate 구조를 이용한 고전력 AlGaN/GaN HEMT 제작 | - |
dc.title.alternative | Fabrication of high power AlGaN/GaN HEMTs using passivation and field plate structure | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 243680/325007 | - |
dc.description.department | 한국과학기술원 : 전기및전자공학전공, | - |
dc.identifier.uid | 020033110 | - |
dc.contributor.localauthor | 양경훈 | - |
dc.contributor.localauthor | Yang, Kyoung-Hoon | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.