Passivation효과를 고려한 InP기반 HEMT의 공정 최적화Fabrication process optimization for InP-based HEMTs considering the passivation effects
- Advisors
- 양경훈researcher; Yang, Kyoung-Hoonresearcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2003
- Identifier
- 180457/325007 / 020013058
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2003.2, [ [iii], 61 p. ]
- Keywords
선택적 식각; 화합물반도체; 양자우물; 초고속; InP; quantum well; BCB; passivation; HEMT
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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