대기압 상태의 MOCVD방법을 이용한 갈륨비소의 선택적 박막성장에 관한 연구A study on the selective epitaxial growth of GaAs by AP-MOCVD
- Advisors
- 권영세researcher; Kwon, Young-Seresearcher
- Description
- 한국과학기술원: 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2001
- Identifier
- 165389/325007 / 000993018
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원: 전기및전자공학전공, 2001.2, [ [ii], 44 p. ]
- Keywords
박막성장; MOCVD
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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