대기압 상태의 MOCVD방법을 이용한 갈륨비소의 선택적 박막성장에 관한 연구A study on the selective epitaxial growth of GaAs by AP-MOCVD

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dc.contributor.advisor권영세-
dc.contributor.advisorKwon, Young-Se-
dc.contributor.author고광진-
dc.contributor.authorKoh, Kwang-Jin-
dc.date.accessioned2011-12-14T01:47:05Z-
dc.date.available2011-12-14T01:47:05Z-
dc.date.issued2001-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=165389&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/37372-
dc.description학위논문(석사) - 한국과학기술원: 전기및전자공학전공, 2001.2, [ [ii], 44 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject박막성장-
dc.subjectMOCVD-
dc.title대기압 상태의 MOCVD방법을 이용한 갈륨비소의 선택적 박막성장에 관한 연구-
dc.title.alternativeA study on the selective epitaxial growth of GaAs by AP-MOCVD-
dc.typeThesis(Master)-
dc.identifier.CNRN165389/325007-
dc.description.department한국과학기술원: 전기및전자공학전공, -
dc.identifier.uid000993018-
dc.contributor.localauthor권영세-
dc.contributor.localauthorKwon, Young-Se-
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EE-Theses_Master(석사논문)
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