Design of SiGe HBT base and DSRC system transmitter

Abstract

Temperature dependence of current gain and unity-gain frequencies of SiGe Heterojunction Bipolar Transistor are presented according as various Ge mole fraction types in the base. A RF chip design of Amplitude Shift Keying modulator and power amplifier of Dedicated Short Range Communication system based on SiGe Heterojunction Bipolar Transistor technology is addressed. HBT technology and its possible application area are discussed. Overview of DSRC system, ASK modulator and Power Amplifier are discussed. Their topology and simulation results are discussed. A new design of ASK modulator is presented.