RF MOSFET small signal modeling including charge conservation capacitances전하 보존 커패시턴스를 포함하는 RF MOSFET 소신호 모델링
A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction. The AC parameters of BSIM3v3 model were also obtained from measured S-parameters.
- Advisors
- Shin, Hyung-Cheolresearcher; 신형철researcher
- Description
- 한국과학기술원 : 전기및전자공학전공,
- Publisher
- 한국과학기술원
- Issue Date
- 2000
- Identifier
- 157417/325007 / 000983043
- Language
- eng
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학전공, 2000.2, [ ii, 59 p. ]
- Keywords
Charge conservation capacitance; 전하보존 커패시턴스; 파라미터 추출; 소신호 모델; 고주파 모스트랜지스터; Parameter extraction; Small signal model; RF MOSFET
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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