RF MOSFET small signal modeling including charge conservation capacitances

Abstract

A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimization after parameter extraction. The AC parameters of BSIM3v3 model were also obtained from measured S-parameters.