Lateral silicon field emission devices using electron beam lithography = 전자선 묘화를 이용한 측면형 실리콘 전계 방출 소자에 관한 연구

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Field emission vacuum microelectronic devices, which operate at a low voltage, require sharp cathode tips and minimal cathode to anode spacing. Using high resolution electron beam lithography in combination with reactive ion etching technique, lateral multi-tip diodes have been fabricated with cathode to anode spacings less than 40nm. The devices were measured in ultra high vacuum chamber which was pumped down to $3×10^{-9}$ Torr. The electrical characteristics show low voltage operation and the linearity of the Fowler-Nordheim plots provides another confirmation of field emission. Triodes have been fabricated by adding a gate electrode between cathode and anode electrodes. After the emission currents of the fabricated devices versus time under $V_A=30V$ for 2hours, the maximum current fluctuation was 0.2%.
Advisors
Shin, Hyung-Cheolresearcher신형철researcher
Description
한국과학기술원 : 전기및전자공학과,
Publisher
한국과학기술원
Issue Date
1999
Identifier
150877/325007 / 000973387
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.2, [ iii, 50 p. ]

URI
http://hdl.handle.net/10203/37188
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=150877&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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