Lateral silicon field emission devices using electron beam lithography = 전자선 묘화를 이용한 측면형 실리콘 전계 방출 소자에 관한 연구

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dc.contributor.advisorShin, Hyung-Cheol-
dc.contributor.advisor신형철-
dc.contributor.authorYang, Sun-A-
dc.contributor.author양선아-
dc.date.accessioned2011-12-14T01:44:11Z-
dc.date.available2011-12-14T01:44:11Z-
dc.date.issued1999-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=150877&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/37188-
dc.description학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1999.2, [ iii, 50 p. ]-
dc.description.abstractField emission vacuum microelectronic devices, which operate at a low voltage, require sharp cathode tips and minimal cathode to anode spacing. Using high resolution electron beam lithography in combination with reactive ion etching technique, lateral multi-tip diodes have been fabricated with cathode to anode spacings less than 40nm. The devices were measured in ultra high vacuum chamber which was pumped down to $3×10^{-9}$ Torr. The electrical characteristics show low voltage operation and the linearity of the Fowler-Nordheim plots provides another confirmation of field emission. Triodes have been fabricated by adding a gate electrode between cathode and anode electrodes. After the emission currents of the fabricated devices versus time under $V_A=30V$ for 2hours, the maximum current fluctuation was 0.2%.eng
dc.languageeng-
dc.publisher한국과학기술원-
dc.titleLateral silicon field emission devices using electron beam lithography = 전자선 묘화를 이용한 측면형 실리콘 전계 방출 소자에 관한 연구-
dc.typeThesis(Master)-
dc.identifier.CNRN150877/325007-
dc.description.department한국과학기술원 : 전기및전자공학과, -
dc.identifier.uid000973387-
dc.contributor.localauthorShin, Hyung-Cheol-
dc.contributor.localauthor신형철-
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EE-Theses_Master(석사논문)
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