sol-gel법에 의한 비휘발성 메모리용 $SrBi_2Ta_2O_9$ 박막의 제조 및 전기적 특성 평가Fabrications and characterizations of electrical properties of $SrBi_2Ta_2O_9$ thin films for non-volatile memory by sol-gel method
- Advisors
- 이희철researcher; Lee, Hee-Cheulresearcher
- Description
- 한국과학기술원 : 전기및전자공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1997
- Identifier
- 114229/325007 / 000953315
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1997.2, [ [iii], 63 p. ]
- Keywords
피로 현상; 잔류 분극; 박막; 스트론튬비쓰무쓰탄탈네이트; 비휘발성 메모리; 후속 열처리; Post-annealing; Fatigue; Remnant polarization; Thin film; Non-volatile memory
- Appears in Collection
- EE-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.