sol-gel법에 의한 비휘발성 메모리용 $SrBi_2Ta_2O_9$ 박막의 제조 및 전기적 특성 평가Fabrications and characterizations of electrical properties of $SrBi_2Ta_2O_9$ thin films for non-volatile memory by sol-gel method

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dc.contributor.advisor이희철-
dc.contributor.advisorLee, Hee-Cheul-
dc.contributor.author신창호-
dc.contributor.authorShin, Chang-Ho-
dc.date.accessioned2011-12-14T01:40:08Z-
dc.date.available2011-12-14T01:40:08Z-
dc.date.issued1997-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=114229&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/36930-
dc.description학위논문(석사) - 한국과학기술원 : 전기및전자공학과, 1997.2, [ [iii], 63 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subject피로 현상-
dc.subject잔류 분극-
dc.subject박막-
dc.subject스트론튬비쓰무쓰탄탈네이트-
dc.subject비휘발성 메모리-
dc.subject후속 열처리-
dc.subjectPost-annealing-
dc.subjectFatigue-
dc.subjectRemnant polarization-
dc.subjectThin film-
dc.subjectNon-volatile memory-
dc.titlesol-gel법에 의한 비휘발성 메모리용 $SrBi_2Ta_2O_9$ 박막의 제조 및 전기적 특성 평가-
dc.title.alternativeFabrications and characterizations of electrical properties of $SrBi_2Ta_2O_9$ thin films for non-volatile memory by sol-gel method-
dc.typeThesis(Master)-
dc.identifier.CNRN114229/325007-
dc.description.department한국과학기술원 : 전기및전자공학과, -
dc.identifier.uid000953315-
dc.contributor.localauthor이희철-
dc.contributor.localauthorLee, Hee-Cheul-
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EE-Theses_Master(석사논문)
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