Unified random access memory with nanowire and energy band engineering = 에너지 밴드 엔지니어링 및 나노와이어 기반의 융합메모리

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It’s time for a paradigm shift in a silicon-based memory. $\It{‘Hwang’s Law’}$, the memory capacity doubling every year, has been the basis of 8-year technological and economic revolution by shrinking of transistors. Whether this size scaling has enabled the exponential growth in a semiconductor industry, it will eventually come to an end in the near future. The focus in the memory will have to shift to devices that are not just increasingly scalable but multi-functions supportable. As a technological breakthrough that can overcome the saturation in the revenue obtained from $\It{‘scaling’}$, a novel type of fusion memory is presented. Combined with a charge-trapping gate dielectric in a floating body transistor, functions of a non-volatile flash memory and high-speed capacitorless 1T-DRAM are integrated in a single memory transistor. The memory named $\underbar{U}nified \underbar{R}andom \underbar{A}ccess \underbar{M}emory$ (URAM) could radically improve the performance of embedded system without shrinking memory cells, and the paradigm shift from $\It{‘scaling’}$ to $\It{‘multi-function’}$ will create new value and continue the evolution of silicon memory technology. In the end, URAM will in turn become the cornerstone of new silicon-based memory that operates versatile functions of high-speed mode and non-volatile mode according to the end user’s demand.
Advisors
Choi, Yang-Kyuresearcher최양규researcher
Description
한국과학기술원 : 전기 및 전자공학과,
Publisher
한국과학기술원
Issue Date
2010
Identifier
418755/325007  / 020065182
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 전기 및 전자공학과, 2010.2, [ iv, 141 p. ]

Keywords

non-volatile flash memory; Nanowire; Energy Band Engineering; Unified Memory; capacitorless 1T-DRAM; 커패시터 없는 디램; 비휘발성 플래쉬 메모리; 나노와이어; 에너지 밴드 엔지니어링; 융합메모리

URI
http://hdl.handle.net/10203/35576
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=418755&flag=dissertation
Appears in Collection
EE-Theses_Ph.D.(박사논문)
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