Development of 3D phase-field based quantum transport simulator and its application to ferroelectric field-effect transistors

Abstract

Ferroelectric-based devices, such as ferroelectric field effect transistor and ferroelectric random access memory, have attracted much attentions due to their advantages like high speed, low power, non-volatility, and process compatibility. As the device size shrinks, simulation-based research becomes important. However, the simulation approaches and commercial tools have limitations in modelling nano-scale semiconductor channel characteristics. This thesis aims to bridge this gap by developing a simulator that integrates three-dimensional continuum physical models with quantum mechanical transport models, encompassing the Landau-Ginzburg equation, the non-equilibrium Green's function equation, Poisson equation, heat equation, and Navier-Cauchy equation. The ultimate goal is to develop a multi-physics simulator reflecting both thermal and mechanical coupling, facilitating advanced research on next-generation ferroelectric-based semiconductor devices.