Development of CMOS BEOL compatible MEMS memory and CMOS-MEMS hybrid circuit

Abstract

As CMOS device continues to scale down, leakage current is one of the significant challenges. Unlike CMOS devices, MEMS switch shows low power characteristics with mechanical movement. By designing low restoring force of MEMS switch, it can be utilize as a mechanical memory. MEMS memory shows non-volatile characteristic with stiction phenomenon between two electrodes. By integrating this MEMS memory with CMOS BEOL, CMOS-MEMS hybrid circuit can be implemented. This circuit shows low power characteristic and applicable such as FPGA, TCAM and power gating. MEMS memory for CMOS-MEMS integration should be fabricated with low temperature which below than BEOL degradation temperature and CMOS circuit should have a pad which can connect CMOS and MEMS memory. In this thesis, through design and fabricate MEMS memory, design CMOS circuit for MEMS integration and planarization through CMP, all advanced development process for CMOS-MEMS integration is verified.