Glass interposer design, simulation and measurement for 5G RF front end module (FEM) and next generation high bandwidth memory (HBM)

Abstract

In this thesis, we designed, simulated and measured the glass interposer for a 5G RF front end module (FEM) and next generation high bandwidth memory (HBM). In this thesis, a glass interposer was proposed in place of the conventional silicon interposer, and the performance of the glass interposer was verified by applying it to the 5G (28 GHz) RF FEM and the next generation HBM. The channel design of the 5G RF FEM was conducted and its performance was verified through simulation. The designed glass interposer for the 5G RF FEM was fabricated to verify the performance through measurement. The fabricated glass interposer-based 5G RF FEM satisfied the target specifications including gain and noise figure. In addition, glass interposer for the next generation HBM considering signal and power integrity was designed to analyze the performance of the glass interposer in the next generation HBM. The designed glass interposer for the next generation HBM was compared with the conventional silicon interposer and verified that the glass interposer has better electrical performance than the silicon interposer.