Grating - Resonance InGaAs Narrowband Photodetector for Multispectral Detection in NIR - SWIR Region

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We proposed grating-resonance narrowband photodetector (PD) for the wavelength selection functionality at the wavelength of 1300 sim 1700 nm. We first carefully designed the PD using the device structure of InGaAs thin absorbing layer formed on Si grating for the optical resonance, providing narrowband detection at specific wavelength. Based on parameters designed from the simulation, we fabricated an array of pixels to selectively detect different wavelengths, but with the same PD thickness across the whole pixels. Then, we systematically characterized the fabricated narrowband PDs. Our device showed great wavelength selectivity and tunability depending on the grating design with a quite narrow full width half maximum lt 26 nm.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Issue Date
2022-12-06
Language
English
Citation

2022 International Electron Devices Meeting, IEDM 2022, pp.1941 - 1944

ISSN
2380-9248
DOI
10.1109/IEDM45625.2022.10019463
URI
http://hdl.handle.net/10203/315651
Appears in Collection
EE-Conference Papers(학술회의논문)
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