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Kim, Sanghyeon (김상현)
부교수, (전기및전자공학부)

https://www.3doedl.com/

Research Area
Monolithic 3D integrated device, Next generation computing device, MicroLED display
Co-researchers
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Silicon-based integrated passive device stack for III-V/Si monolithic 3D circuits operating on RF band

    Park, Minsik; Seong, Minkyoung; Jeong, Jaeyong; et al, SOLID-STATE ELECTRONICS, v.221, 2024-11

    2
    Highly-efficient (>70%) and Wide-spectral (400-1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

    Geum, Dae-Myeong; Lim, Jinha; Jang, Junho; et al, LIGHT-SCIENCE & APPLICATIONS, v.13, no.1, 2024-11

    3
    Ultrasensitive Mid-Infrared Optical Gas Sensor Based on Germanium-on-Insulator Photonic Circuits with Limit-of-Detection at Sub-ppm Level

    Lim, Jinha; Shim, Joonsup; Kim, Inki; et al, ACS PHOTONICS, v.11, no.10, pp.4268 - 4278, 2024-10

    4
    Freestanding Germanium Photonic Crystal Waveguide for a Highly Sensitive and Compact Mid-Infrared On-Chip Gas Sensor

    Kim, Inki; Lim, Jinha; Shim, Joonsup; et al, ACS SENSORS, v.9, no.10, pp.5116 - 5126, 2024-10

    5
    Thermally tunable microring resonators based on germanium-on-insulator for mid-infrared spectrometer

    Lim, Jinha; Shim, Joonsup; Kim, Ilgyu; et al, APL PHOTONICS, v.9, no.10, 2024-10

    6
    Intrinsic Thermomechanical Properties of Freestanding TEOS-SiO2 Thin Films Depending on Thickness

    Kim, Hyeongjun; Kim, Dong Jun; Kim, Joon Pyo; et al, ACS APPLIED ELECTRONIC MATERIALS, v.6, no.7, pp.5293 - 5300, 2024-07

    7
    Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: high pixel density arrays demonstration

    Park, Juhyuk; Youn, Eun-Jeong; Baek, Woo Jin; et al, OPTICS EXPRESS, v.32, no.14, pp.24242 - 24250, 2024-07

    8
    Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion

    Jeong, Jaeyong; Kim, Seongkwang; Suh, Yoonje; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.8, pp.4517 - 4523, 2024-06

    9
    High electron mobility in metamorphic epitaxial InAs0.7Sb0.3 compound and its p-i-n photodetector

    Kang, Sooseok; Roh, Il-Pyo; Kim, Sang Hyeon; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.989, 2024-06

    10
    Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K

    Jeong, Jaeyong; Kim, Jongmin; Lee, Jisung; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3390 - 3395, 2024-05

    11
    Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET

    Kuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3429 - 3432, 2024-05

    12
    Large Polarization of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>x</sub> Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

    Suh, Yoonje; Jeong, Jaeyong; Kim, Bong Ho; et al, IEEE ELECTRON DEVICE LETTERS, v.45, no.5, pp.766 - 769, 2024-05

    13
    Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics

    Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.1, 2024-01

    14
    Heterogeneous 3-D Sequential CFETs With Ge (110) Nanosheet p-FETs on Si (100) Bulk n-FETs

    Kim, Seong Kwang; Lim, Hyeong-Rak; Jeong, Jaejoong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp.393 - 399, 2024-01

    15
    Experimental demonstration of high-Q MRR based on a germanium-on-insulator platform with an yttria insulator in the mid-IR range

    Lim, Jinha; Shim, Joonsup; Kim, Inki; et al, PHOTONICS RESEARCH, v.11, no.11, pp.A80 - A87, 2023-11

    16
    200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration

    Park, Minsik; Song, Jonghyun; Jeong, Jaeyong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.10, pp.5257 - 5264, 2023-10

    17
    Examination of Ferroelectric FET for "Cold" Nonvolatile Memory

    Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.8, pp.4122 - 4127, 2023-08

    18
    Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

    Jeon, Jihoon; Kuk, Song-Hyeon; Cho, Ah-Jin; et al, APPLIED PHYSICS LETTERS, v.122, no.23, 2023-06

    19
    Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement

    Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; et al, ADVANCED ELECTRONIC MATERIALS, v.9, no.5, 2023-05

    20
    Low-Loss and High-Confinement Photonic Platform Based on Germanium-on-Insulator at Mid-Infrared Range for Optical Sensing

    Lim, Jinha; Shim, Joonsup; Kim, Inki; et al, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.41, no.9, pp.2824 - 2833, 2023-05
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