High-Performance Top-Gated MoS2 Transistor through Seed Layer Engineering Based on initiated Chemical Vapor Deposition (iCVD) Process
- Publisher
- AEFM
- Issue Date
- 2023-07-10
- Language
- English
- Citation
2023 Advanced Epitaxy for Freestanding Membranes and 2D Materials
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.