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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

High-Performance Top-Gated MoS2 Transistor through Seed Layer Engineering Based on initiated Chemical Vapor Deposition (iCVD) Process

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dc.contributor.authorPark, Seo Hakko
dc.contributor.authorKang, Minguko
dc.contributor.authorLee, Inseongko
dc.contributor.authorLee, Hyeonjiko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2023-10-16T01:03:26Z-
dc.date.available2023-10-16T01:03:26Z-
dc.date.created2023-10-13-
dc.date.issued2023-07-10-
dc.identifier.citation2023 Advanced Epitaxy for Freestanding Membranes and 2D Materials-
dc.identifier.urihttp://hdl.handle.net/10203/313346-
dc.languageEnglish-
dc.publisherAEFM-
dc.titleHigh-Performance Top-Gated MoS2 Transistor through Seed Layer Engineering Based on initiated Chemical Vapor Deposition (iCVD) Process-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2023 Advanced Epitaxy for Freestanding Membranes and 2D Materials-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationCOEX, Seoul-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorPark, Seo Hak-
dc.contributor.nonIdAuthorKang, Mingu-
dc.contributor.nonIdAuthorLee, Inseong-
dc.contributor.nonIdAuthorLee, Hyeonji-
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EE-Conference Papers(학술회의논문)
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