Synthesis of graphene layers by inductive coupled plasma enhanced chemical vapor deposition (ICP-CVD) for application in optoelectronics
The thin films of Ni and Cu have been deposited on SiO2/Si(100) substrates in a thermal evaporator. The graphene layers have been grown on Ni-Cu films under C2H2-H2Ar plasma under vacuum annealing condition in ICP-CVD.
- Publisher
- OSA - The Optical Society
- Issue Date
- 2019-11
- Language
- English
- Citation
Photonics for Energy, PFE_2019
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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