Synthesis of graphene layers by inductive coupled plasma enhanced chemical vapor deposition (ICP-CVD) for application in optoelectronics

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dc.contributor.authorThant, Aye Ayeko
dc.contributor.authorJung, Dae-Yoolko
dc.contributor.authorLee, Jung-Yongko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2023-08-15T03:00:58Z-
dc.date.available2023-08-15T03:00:58Z-
dc.date.created2023-07-07-
dc.date.issued2019-11-
dc.identifier.citationPhotonics for Energy, PFE_2019-
dc.identifier.urihttp://hdl.handle.net/10203/311520-
dc.description.abstractThe thin films of Ni and Cu have been deposited on SiO2/Si(100) substrates in a thermal evaporator. The graphene layers have been grown on Ni-Cu films under C2H2-H2Ar plasma under vacuum annealing condition in ICP-CVD.-
dc.languageEnglish-
dc.publisherOSA - The Optical Society-
dc.titleSynthesis of graphene layers by inductive coupled plasma enhanced chemical vapor deposition (ICP-CVD) for application in optoelectronics-
dc.typeConference-
dc.identifier.scopusid2-s2.0-85084446784-
dc.type.rimsCONF-
dc.citation.publicationnamePhotonics for Energy, PFE_2019-
dc.identifier.conferencecountryCC-
dc.identifier.conferencelocationWuhan-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorThant, Aye Aye-
dc.contributor.nonIdAuthorLee, Jung-Yong-
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EE-Conference Papers(학술회의논문)
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