High-performance Field-effect-transistor Based on MOCVD grown Bismuth-oxy-chalcogenides
- Publisher
- UNIST, 한국반도체산업협회, 한국반도체연구조합
- Issue Date
- 2022-01-25
- Language
- English
- Citation
제29회 한국반도체학술대회
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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