High-performance Field-effect-transistor Based on MOCVD grown Bismuth-oxy-chalcogenides
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 채현준 | ko |
| dc.contributor.author | 강기범 | ko |
| dc.contributor.author | 강민수 | ko |
| dc.date.accessioned | 2023-01-17T12:03:04Z | - |
| dc.date.available | 2023-01-17T12:03:04Z | - |
| dc.date.created | 2023-01-10 | - |
| dc.date.issued | 2022-01-25 | - |
| dc.identifier.citation | 제29회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/304552 | - |
| dc.language | English | - |
| dc.publisher | UNIST, 한국반도체산업협회, 한국반도체연구조합 | - |
| dc.title | High-performance Field-effect-transistor Based on MOCVD grown Bismuth-oxy-chalcogenides | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제29회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 정선 하이원리조트 | - |
| dc.contributor.localauthor | 강기범 | - |
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