Enhancement mode MoS2 FET engineering via O2 plasma treatment with Al2O3 barrier layer

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 294
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Inseongko
dc.contributor.authorKang, Minguko
dc.contributor.authorPark, Seo Hakko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2022-11-28T06:02:22Z-
dc.date.available2022-11-28T06:02:22Z-
dc.date.created2022-11-27-
dc.date.issued2022-11-16-
dc.identifier.citationThe 13th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2022)-
dc.identifier.urihttp://hdl.handle.net/10203/301120-
dc.languageEnglish-
dc.publisherRecent Progress in Graphene and Two-dimensional Materials Research Conference-
dc.titleEnhancement mode MoS2 FET engineering via O2 plasma treatment with Al2O3 barrier layer-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 13th Recent Progress in Graphene and Two-dimensional Materials Research Conference (RPGR 2022)-
dc.identifier.conferencecountryCH-
dc.identifier.conferencelocationCHANG YUNG-FA FOUNDATION International Convention Center-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorLee, Inseong-
dc.contributor.nonIdAuthorKang, Mingu-
dc.contributor.nonIdAuthorPark, Seo Hak-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0