Geometric variance studies of spin-orbit torque magnetic random access memory기하학적 변형에 따른 스핀 궤도 토크 자기 임의 접근 기억장치 연구

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We demonstrate the effect of shape deformation in spin-orbit torque magnetic random access memory (SOT-MRAM) based on micromagnetic simulation by generating 1000 randomly deformed samples using the exponentially decaying autocorrelation function. The conventional in-plane magnetic field-assisted SOT write scheme and the recently proposed spin-transfer torque-spin-orbit torque (STT-SOT) write scheme were simulated and compared with the effect of the Gilbert damping constant ($\alpha$) considered in the presence and the absence of the Dzyaloshinskii-Moriya interaction (DMI) and stray field. We found that shape deformation of the MTJ can result in write failure or degradation of the switching time. To compensate the device-to-device performance variation induced by the shape deformation, the condition of high alpha and the presence of the DMI is desired for the magnetic field-assisted write scheme. The STT-SOT write scheme shows slight improvement in the switching performance for the larger alpha and shows write failure when the stray field is present while it retains 100% switching probability even with small alpha regardless of the DMI.
Advisors
Shin, Mincheolresearcher신민철researcher
Description
한국과학기술원 :전기및전자공학부,
Publisher
한국과학기술원
Issue Date
2021
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 전기및전자공학부, 2021.2,[ix, 58 p. :]

Keywords

Spintronics device▼aSTT-MRAM▼aSOT-MRAM▼aMicromagnetic simulation▼aMTJ; 스핀트로닉스 소자▼a스핀 전달 토크 자성메모리▼a스핀 궤도 토크 자성메모리▼a마이크로마그네틱 전산모사▼a자기 터널 접합

URI
http://hdl.handle.net/10203/296004
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=948713&flag=dissertation
Appears in Collection
EE-Theses_Master(석사논문)
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