Development of organic planarization process and material via initiated chemical vapor deposition process

Abstract

With the development of the electronic devices, importance of the planarization process is increasing for improving device performance and process efficiency. Existing research focuses on inorganic materials and solvent-based processes, so it is necessary to develop an organic planarization layer suitable for application to flexible devices and multi-layer structures. In this thesis, organic planarization process via initiated chemical vapor deposition (iCVD) is developed. A copolymer called pGAD, a polymer containing a cross-lining site that allows improving the thermal and mechanical stability of the materials by the post-annealing process, was suggested as a material for the planarization layer. Developed planarization layer shows both good gap filling property and surface smoothness after deposition.