DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Im, Sung Gap | - |
dc.contributor.advisor | 임성갑 | - |
dc.contributor.author | Shim, Hye Rin | - |
dc.date.accessioned | 2022-04-21T19:31:42Z | - |
dc.date.available | 2022-04-21T19:31:42Z | - |
dc.date.issued | 2021 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=949011&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/295390 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 생명화학공학과, 2021.2,[vi, 34 p. :] | - |
dc.description.abstract | With the development of the electronic devices, importance of the planarization process is increasing for improving device performance and process efficiency. Existing research focuses on inorganic materials and solvent-based processes, so it is necessary to develop an organic planarization layer suitable for application to flexible devices and multi-layer structures. In this thesis, organic planarization process via initiated chemical vapor deposition (iCVD) is developed. A copolymer called pGAD, a polymer containing a cross-lining site that allows improving the thermal and mechanical stability of the materials by the post-annealing process, was suggested as a material for the planarization layer. Developed planarization layer shows both good gap filling property and surface smoothness after deposition. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Planarization▼aOrganic planarizationi layer▼aCross-linking▼ainitiated Chemical vapor deposition▼aiCVD | - |
dc.subject | 평탄화▼a유기평탄층▼a가교고분자▼a기상 증착 고분자▼aiCVD | - |
dc.title | Development of organic planarization process and material via initiated chemical vapor deposition process | - |
dc.title.alternative | 개시제를 이용한 화학 기상 증착 공정을 이용한 유기 평탄화 공정 및 물질 연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :생명화학공학과, | - |
dc.contributor.alternativeauthor | 심혜린 | - |
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