2D-3D heterojunction tunnel field-effect transistor자연 헤테로 접합 터널 전계 효과 트랜지스터

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Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law.
Assignee
KAIST
Country
US (United States)
Application Date
2020-07-16
Application Number
16930422
Registration Date
2021-09-14
Registration Number
11121243
URI
http://hdl.handle.net/10203/289895
Appears in Collection
PH-Patent(특허)
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