DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Sungjae | ko |
dc.date.accessioned | 2021-12-02T06:46:42Z | - |
dc.date.available | 2021-12-02T06:46:42Z | - |
dc.identifier.uri | http://hdl.handle.net/10203/289895 | - |
dc.description.abstract | Disclosed is a 2D-3D HJ-TFET made of a material, the band gap of which changes according to the thickness, such as black phosphorous or TMDC, in order to extend Moore's law. More particularly, disclosed are the structure of a 2D-3D HJ-TFET and a method for manufacturing the same, wherein the 2D-3D HJ-TFET is made of a material such as black phosphorous or TMDC such that the same consumes less power, has a high switching speed, can operate in a complementary manner so as to replace a conventional CMOS transistor, and can extend Moore's law. | - |
dc.title | 2D-3D heterojunction tunnel field-effect transistor | - |
dc.title.alternative | 자연 헤테로 접합 터널 전계 효과 트랜지스터 | - |
dc.type | Patent | - |
dc.type.rims | PAT | - |
dc.contributor.localauthor | Cho, Sungjae | - |
dc.contributor.assignee | KAIST | - |
dc.identifier.iprsType | 특허 | - |
dc.identifier.patentApplicationNumber | 16930422 | - |
dc.identifier.patentRegistrationNumber | 11121243 | - |
dc.date.application | 2020-07-16 | - |
dc.date.registration | 2021-09-14 | - |
dc.publisher.country | US | - |
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