DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Gwangsik | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2021-11-23T06:41:06Z | - |
dc.date.available | 2021-11-23T06:41:06Z | - |
dc.date.created | 2021-11-22 | - |
dc.date.created | 2021-11-22 | - |
dc.date.created | 2021-11-22 | - |
dc.date.issued | 2021-11 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.11, pp.1223 - 1226 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/289362 | - |
dc.description.abstract | A Ka-band CMOS two-stage Doherty power amplifier (DPA) is presented, whose back-off efficiency is improved by voltage-mode Doherty load modulation. The input and output networks of its power stage are composed of transmission line transformers (TLTs) and single-ended Doherty networks implemented with lumped elements. An adaptive bias circuit to boost the Doherty operation is included in the gate network of the auxiliary amplifier. It shows a power gain of 16.2 dB with 48.2% peak drain efficiency (DE) and 25% 6-dB back-off DE at 26 GHz. It has two times higher 6-dB back-off efficiency in comparison to that of a theoretical class-A power amplifier. It is fabricated in a 28-nm bulk CMOS process and occupies 0.094-mm(2) core size. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Ka-Band CMOS Power Amplifier Based on Transmission Line Transformers With Single-Ended Doherty Network | - |
dc.type | Article | - |
dc.identifier.wosid | 000714714000015 | - |
dc.identifier.scopusid | 2-s2.0-85118849332 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 1223 | - |
dc.citation.endingpage | 1226 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2021.3088585 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | Doherty | - |
dc.subject.keywordAuthor | Ka-band | - |
dc.subject.keywordAuthor | millimeter wave (mm-Wave) | - |
dc.subject.keywordAuthor | mm-Wave 5G | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.subject.keywordPlus | COMPENSATION | - |
dc.subject.keywordPlus | COMBINER | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | LOAD | - |
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