Spin-orbit-torque engineering via oxygen manipulation

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Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to spin-orbit torques, which are a more powerful tool for controlling magnetization and can enrich device functionalities. The engineering of spin-orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin-orbit-torque devices triggers a new mechanism of spin-orbit torque, which is about two times stronger than that based on the spin Hall effect. We thus introduce a way to engineer spin-orbit torques via oxygen manipulation. Combined with electrical gating of the oxygen level, our findings may also pave the way towards reconfigurable logic devices.
Publisher
NATURE PUBLISHING GROUP
Issue Date
2015-04
Language
English
Article Type
Article
Citation

NATURE NANOTECHNOLOGY, v.10, no.4, pp.333 - 338

ISSN
1748-3387
DOI
10.1038/NNANO.2015.18
URI
http://hdl.handle.net/10203/277463
Appears in Collection
PH-Journal Papers(저널논문)
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